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Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

机译:通过接触的晶圆级组装半导体纳米线阵列   印花

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摘要

Controlled and uniform assembly of "bottom-up" nanowire (NW) materials withhigh scalability has been one of the significant bottleneck challenges facingthe potential integration of nanowires for both nano and macro electroniccircuit applications. Many efforts have focused on tackling this challenge, andwhile significant progress has been made, still most presented approaches lackeither the desired controllability in the positioning of nanowires or theneeded uniformity over large scales. Here, we demonstrate wafer-scale assemblyof highly ordered, dense, and regular arrays of NWs with high uniformity andreproducibility through a simple contact printing process. We demonstratecontact printing as a versatile strategy for direct transfer and controlledpositioning of various NW materials into complex structural configurations onsubstrates. The assembled NW pitch is shown to be readily modulated through thesurface chemical treatment of the receiver substrate, with the highest densityapproaching ~8 NW/um, ~95% directional alignment and wafer-scale uniformity.Furthermore, we demonstrate that our printing approach enables large-scaleintegration of NW arrays for various device structures on both Si and plasticsubstrates, with a controlled semiconductor channel width, and therefore ONcurrent, ranging from a single NW (~10 nm) and up to ~250 um, consisting of aparallel array of over 1,250 NWs.
机译:具有高可扩展性的“自下而上”纳米线(NW)材料的控制和均匀组装一直是纳米线在纳米和宏观电子电路应用中潜在集成所面临的重大瓶颈挑战之一。许多努力集中在应对这一挑战上,尽管已经取得了重大进展,但仍然存在大多数提出的方法,它们既缺乏纳米线定位中的理想可控制性,也缺乏大规模上所需的均匀性。在这里,我们演示了通过简单的接触印刷工艺,具有高度均匀性和可再现性的高阶,致密和规则的NW阵列的晶圆级组装。我们展示了接触印刷作为一种将多种NW材料直接转移和控制定位到基板上复杂结构配置的通用策略。组装后的NW间距显示出易于通过接收器基板的表面化学处理进行调制,最高密度接近〜8 NW / um,方向对准率约为95%,晶圆尺寸均匀性。此外,我们证明了我们的印刷方法能够实现NW阵列在Si和塑料衬底上用于各种器件结构的大规模集成,具有受控的半导体通道宽度,因此ONcurrent范围从单个NW(〜10 nm)到最大〜250 um,包括超过1,250的并行阵列西北。

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